Temperature Sensitivity of Silicon Nanowire Transistor Based on Channel Length

This paper investigates the temperature sensitivity of Silicon Nanowire Transistor (SiNWT) depends on the channel length (Lg). It also studies the possibility of using it as a Nano- temperature sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the nanowire transistor. Current-voltage characteristics with different values of temperature with channel length [L
_g
= 25, 45, 65, 85 and 105 nanometer (nm)], were simulated. MOS diode mode connection suggested to measure the temperature sensitivity of SiNWT. The obtained results show that SiNWT achieved better temperature sensitivity with channel length range between 25 nm to 85 nm at operation voltage (V
_DD
) range 1 V to 3.5 V nm. Beyond that, the temperature sensitivity will be constant even though the channel length increased up to 105 nm and V
_DD
increased to 5 V.