Flexible HfO2/Graphene Oxide Selector With Fast Switching and High Endurance

Selector is considered as a promising solution to solve sneak-path current for high-density 3-Dimensional (3D) memories. However, bidirectional selector with fast speed and long lifetime is still extremely needed. In this work, 2D material of graphene oxide containing epoxide, hydroxyl and carboxyl (−COOH, −OH, >C=O) is assembled with HfO
₂
to form a flexible bi-layer selector. Interestingly, the selector exhibits excellent uniformity, fast switching speed (~160 ns) and remarkable endurance of
$\sim 5\times 10^{8}$
cycles. Moreover, no performance degradation is observed for more than
$10^{3}$
times with the bending radii ranging from 40 mm to 20 mm. The high uniformity and excellent endurance may be attributed to the insulating interface layer at the HfO
₂
/GO interface, which plays a vital role on the connection/disrupt of conductive filament (CF). Thus, the incorporation of GO into HfO
₂
selector may be a feasible way to achieve a promising HfO
₂
-based selector, which have potential applications in high-density 3D integration for flexible electronics.