DC and Noise Analysis of Si and 3C-SiC based IMPATTs at W-Band

In this paper, an analysis has been made on IMPATT diodes based on Group IV-IV materials such as Silicon (Si) and 3C type Silicon Carbide (3C-SiC) operating at W-band (94GHz). A double iterative computer method based on the drift-diffusion model has been used to study the DC and noise properties of the device. It is observed that SiC (3C) based IMPATTs provide higher efficiency as well as higher output power than Si based IMPATTs. The Simulation studies also exhibit that Si based IMPATTs provide noise measure and NSD (Noise Spectral density) of around 38dB and 8×10
^-16
V
²
S respectively whereas SiC(3C) based IMPATTs provide noise measure and NSD(Noise Spectral density) of around 44dB and 5.5×10
^-15
V
²
S respectively at 94GHz.