Optical characterization of RF sputtered AlN thin film for acoustic and optoelectronics devices

The paper reports the optical characteristics of Radio Frequency (RF) sputtered piezoelectric Aluminum Nitride (AlN) film on a quartz substrate. The AlN film of 300 nm thickness has been deposited by using aluminium sputtering in presence of nitrogen and argon gases. The optimized parameters such as nitrogen concentration (30%), sputtering power (120W), sputtering pressure (3×10
^-3
mbar) and substrate temperature (100C) have been used to deposit a thin film. The deposited thin film has been characterized using UV visible spectroscopy. The optical parameters such as transmittance, absorbance, absorbance coefficient, reflectance, refractive index, and dielectric constant of the thin film have been studied. The deposited thin film is very useful for ultraviolet monolithic white LED devices, acoustic devices which provide high lumens efficiency, high brightness durable, long-lasting and low-cost devices.