A new approach to achieve Gunn effect for GaN based THz sources with high power

For the first time, Gunn effect is shown using a side-contact (SC) technology. Our THz Gunn source is based on 2 μm thick gallium nitride (GaN) with stable operation up to 22 V due to better heat sink and side contact technology. A diode current of about 1 A was achieved for high output power.