Influence of gate drive circuit for power device on EMI noise characteristics in a phase-leg topology

Fast and high-frequency switching operation of wide-bandgap power semiconductor devices such as Silicon carbide (SiC) and Gallium nitride (GaN) could cause severe electromagnetic interference (EMI) noise problem in high and wide frequency range. This report experimentally investigates the dependency of gate drive circuit configuration on EMI noise characteristics of SiC-based half-bridge converter.