Sidewall Transfer Patterning-Based Nano-Crystalline MoS2 Sensing Element for Stress and Optical MEMS Sensor

This paper reports patterned nano-crystalline MoS
₂
as a sensing element for stress and electromagnetic radiation sensing. Sidewall Transfer Technique (STT) is used to pattern these nano-crystalline MoS
₂
sensing structures without using any high-end lithography tool. All these sensing structures are realized on an SOI wafer. Four-point bending method is used to apply stress on the sensing elements, and results show the gauge factor of 74.6±6. Nano-crystalline MoS
₂
sensing element is then irradiated by the electromagnetic radiation of wavelength 660 nm, which has doubled the current flow in the sensing element. Investigation of the, combined effects of stress and electromagnetic radiation is currently ongoing.