TCAD Framework to Estimate the NBTI Degradation in FinFET and GAA NSFET Under Mechanical Strain

A physics-based TCAD framework is used to estimate the interface trap generation (ΔN
_IT
) during Negative Bias Temperature Instability (NBTI) stress in P-channel FinFET and Gate All Around (GAA) Nano-Sheet (NS) FET. The impact of mechanical strain due to channel length scaling (L
_CH
) on ΔN
_IT
generation is estimated. The band structure calculations are used to explain the impact of mechanical strain on ΔN
_IT
generation.