TCAD analysis of FinFET temperature-dependent variability for analog applications

The Green's Function based TCAD device variability analysis is extended to allow for temperature-dependent variability, with negligible overhead in terms of simulation time with respect to fixed temperature simulations. We provide temperature and bias-dependent 3D variability analysis of the DC current for a FinFET structure from the 22 nm node, showing how to predict and mitigate the effects of poor thermal management. Based on the quasi-stationary assumption, preliminary analysis of self-heating effects of a FinFET medium power amplifier is also presented.