Modeling of Resonant-Tunneling Diodes I–V Characteristics' Kinetics Under Destabilizing Factors' Influence During Operation

The object of research is resonant-tunneling diode (RTD) based on GaAs/AlGaAs multilayer heterostuctures. The purpose of research is to investigate the kinetics of RTD I-V characteristics under given operating conditions, such as ionizing irradiation and high temperature influence. To achieve this goal, a set of mathematical models is submitted. Submitted models describe RTD I-V characteristic's degradation under the listed operating conditions' influence. Basing on the models developed, program package for RTD I-V characteristics' kinetics simulation was developed. I-V charateristic's kinetics was simulated for several RTD types using the developed package. The results' adequacy is verified by comparison with the experimental data.