Design and Fabrication of Micro LEDs for High Data Rate LiFi Communications

In this research, we have investigated P-I-N structures based on InGaN/GaN materials suitable for different size and adapted to the requirements of device characterization. The fabrication has been performed using different designs. Besides, the optimization of the fabrication process has been performed for multi scaled device fabrication (ranging from 5×5 μm
²
to 100×100 μm
²
) in terms of photolithography, etching, metal deposition and passivation. We have considered μ, -photodiodes with planar and vertical configurations. Design and fabrication of specific coplanar RF electrical transmission lines have been performed in order to reduce the influence of parasitic capacitances. We have therefore evaluated the size effect on capacitance which affects the speed of the devices, and consequently the cut-off frequency. The reported cut-off frequency @ -3dB has been evaluated as 1.5 GHz for a diameter of 25μm. This result indicates a potential response for LiFi needs as a part of optical wireless secured communication technology.