High Voltage Insulated Gate Trigger Thyristor With High-Efficiency Injection for Fast Turn-on and High Current Pulse

In this letter, a 4.5kV high-di/dt insulated gate trigger thyristor (IGTT) with high-efficiency injection is proposed, in which, bottom-punched N-well combined with thick high-doping P±-anode is implemented to enhance the excess carrier injection of both cathode and anode only for fast turn-on with high di/dt and high current pulse. Experimental results show that the proposed HI-IGTT achieves di/dt up to 140kA/μs and peak current of 20.6kA within 200ns. Compared with conventional IGTT and IGBT, the proposed IGTT increases pulse peak current by 76.2% and 516.7%, indicating it is promising for solid-state pulse power closing switching.