The inner phenomena of hard driven GTO using 2-dimensional FEM simulation

The merits of device simulation are not only to predict switching characteristics but also to observe inner phenomena of device such as GTOs. In this paper, the authors analyzed the switching characteristics of hard griven GTOs (HD-GTOs) using a 2-dimensional finite element method (FEM). HD-GTOs operate at a large gate current and commutate current quickly from main circuit to gate circuit, and can reduce both turn-off time and loss. The authors simulate the turn-off characteristics of HD-GTOs and GTOs, and make discussions on the inner phenomena of these devices.