Effects of Lateral Spreading in 2-Dimensional Non-Uniform Doped Junctionless FinFETs

Junctionless FETs have been extensively studied due to its remarkable feature to avoid the need of forming the ultra-steep junctions as in case of conventional transistors; however high doping concentration is required for proper operation of Junctionless FETs. In order to acquire high doping concentration using ion-implantation results in 2-D non-uniform doping profile which includes vertical as well as lateral spreading. In this work, the effect of lateral spreading of the dopants in non-uniform doped Junctionless FinFETs is analyzed through 3-D numerical simulation. The device short channel performance due to variations in the projected range (R_p), lateral straggle (ΔR_t) and dose (Q₀) of the implanted ions is demonstrated using Sentauras TCAD device simulator.