Abstract:
An advanced CMOS-compatible 300-\text{mm}-wafer silicon-photonics platform is introduced that consists of a silicon layer with eight doping masks, two silicon-nitride l...Show MoreMetadata
Abstract:
An advanced CMOS-compatible 300-\text{mm}-wafer silicon-photonics platform is introduced that consists of a silicon layer with eight doping masks, two silicon-nitride layers, three metal and via layers, a dicing trench for smooth edge-coupled facets, and a gain-film trench that enables interaction between the gain material and waveguide layers. The platform was used to demonstrate an electrically-steerable integrated optical phased array powered by an on-chip erbium-doped laser. Lasing with a single-mode output, 30\,\text{dB} side-mode-suppression ratio, and \text{40 mW} lasing threshold was shown, and one-dimensional beam steering with a \text{0.85}^\circ \times \text{0.20}^\circ full-width at half-maximum and \text{30}^\circ /\text{W} electrical steering efficiency was demonstrated. This system represents the first demonstration of a rare-earth-doped laser monolithically-integrated with an active CMOS-compatible silicon-on-insulator photonics system.
Published in: Journal of Lightwave Technology ( Volume: 37, Issue: 24, 15 December 2019)