Atomically sharp silicon and metal field emitters

A method is described for forming atomically sharp silicon tips of less than 10-15 degrees half-angle by utilizing a known oxidation inhibition at regions of high curvature; equally sharp silicon wedges are now made in a similar fashion. The sharp silicon tips serve as the starting point for forming sharp tips of W, beta -W and gold. Field emission data from silicon emitters are compared with Fowler-Nordheim modelling and emission as a function of emitter-anode distance is described.<
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