Effective Contact Resistivity Reduction for Mo/Pd/n-In0.53Ga0.47 as Contact

We compare the contact characteristics for Mo, Pd, and Ti on n-InGaAs layer with a range of active donor concentration from 1.6×10
¹⁸
cm
^-3
to 4.8×10
¹⁹
cm
^-3
. The Fermi level pinning of 0.18 eV lower than the bottom of n-InGaAs conduction band is experimentally manifested. It is also revealed that the contact resistivity (ρ
_c
) of Mo/nInGaAs contact clearly outperforms after annealing. However, for the first time, we demonstrate that the Mo/Pd (2nm)/n-InGaAs contact can achieve a ρ
_c
35% and 20% lower than a single Mo/n-InGaAs contact after annealing at 400 °C and 450 °C for 1min, respectively.