The Ultra-Wideband Microwave Microelectronics Systems in the Si-Ge BiCMOS 130 nm Technology

The article presents the results of the development of an ultra-wideband microwave microelectronics system of the frequency range 0.8...20 GHz. The system consists of a low-noise amplifier combined with a balun, an active mixer based on a double balanced circuit. The frequency doubler of the local oscillator, which is part of the system, works with signals from the frequency range 0.4...10.5 GHz, which reduces the requirements for the local oscillator signal source used. The output signal of the mixer is additionally filtered by an intermediate frequency filter with a software-configurable bandwidth. The following simulation results were obtained: conversion gain of at least 20 dB, VSWR of the RF input no more than 1.7 in the entire operating frequency range, VSWR of the local oscillator frequency doubler no more than 1.5 in the frequency range 0.4...10.5 GHz, VSWR of the intermediate frequency output is not more than 1.5. Isolation between the input of the local oscillator frequency doubler and the output of the IF at a frequency of 10 GHz is 58 dB. Isolation between the RF input and the IF output at 10 GHz is 56 dB. Isolation between the input of the doubler of LO frequency and the input of the RF at a frequency of 10 GHz is 59 dB. The crystal area is 1.330 × 2.580 mm
²
.