Temperature Dependent Behavior of the Optical Gain and Electroabsorption Modulation Properties of an InAs/GaAs Quantum Dot Epistructure

In this work, the feasibility of a monolithically integrated laser and electroabsorption modulator based on the same active quantum dot epistructure is studied. The net modal gain and the absorption in the modulator were measured using the segmented contact method from 25 °C to 125 °C. The maximum of the net modal gain active region of the laser decreases from 10 cm
^-1
at 25 °C to 3.9 cm
^-1
at 125 °C. The non-optimized maximum extinction ratio of the modulator, 4.1 dB·mm
^-1
, is almost constant until 25 °C. The wavelengths at which the net modal gain and the change in absorption are maximum shifts with temperature by 0.04 eV.