Effect of Random Channel Dopants on Timing Variation for Nanometer CMOS Inverters

This paper presents a detailed investigation of the timing variation due to random channel dopants for 22nm Complementary-Metal-Oxide-Semiconductor (CMOS) inverter. Consequently, the timing parameters such as propagation delay, rise time, fall time, high-to-low transition, low-to-high transition and overshooting time and their variations have been extracted and estimated with channel dopants fluctuations. Furthermore, the influence of load capacitance and power supply voltage on timing characteristic also has been studied. This investigation was performed by HSPICE simulation with a high accuracy, which is important for yield improvement and the optimization of CMOS circuit design.