Oxygen Gettering Cap to Scavenge Parasitic Oxide Interlayer in TiSi Contacts

Presence of a native oxide interlayer degrades seriously the contact resistivity (ρc) of co-deposited TiSi (CD-TiSi) on Si:P. The oxide cannot be scavenged by the CD-TSi due to its low solid solubility of O. We tackle the problem by capping the CD-TiSi with an O gettering cap. Utilizing a Ti cap and two-step post-metal rapid thermal anneal, we reduce the ρc of the CD-TiSi on 2 × 10
²¹
cm
^-3
doped Si:P by -3 times, down to -2 ×10-9 Ω· cm
²
. We also demonstrate efficiency of a La cap to scavenge the oxide.