A Low Reverse Recovery Charge Superjunction MOSFET With an Integrated Tunneling Diode

A superjunction MOSFET with an integrated tunneling diode is proposed and investigated by simulations in this article. The tunneling diode comprised the N
⁺
region and the P
⁺
region on the surface of the P-base region is connected in series with the P
⁺
/P-pillar/N
⁺
(sub) diode isolated by an oxide layer. The electrons are prevented from injecting into the P-pillar region from both the N-pillar region and the N
⁺
(sub) region, which leads to a low reverse recovery charge in the proposed device. As a result, up to 72.2% and 74.1% reduction in the reverse recovery charge could be achieved when compared with the conventional one at 300 and 400 K, respectively.