Gate Drivers for High-Frequency Application of Silicon-Carbide MOSFETs: Design considerations for faster growth of LV and MV applications

With the advent of wide-bandgap (WBG) semiconductor devices, silicon-carbide (SiC)-based MOSFETs for high voltage and current serve as a viable replacement for conventional Si-based IGBTs [1], [2]. SiC-based MOSFETs combine the advantages of both IGBTs and MOSFETs, have a low on-state resistance at a high-voltage rating (similar to IGBTs), and lower-switching losses than those of Si MOSFETs, thus making it closer to an ideal switch [3]. This makes it possible for SiC MOSFETs to process high power at high-switching frequencies without compromising the efficiency of the system [4]. Due to the inherent lower on-state specific resistance and faster switching speeds in SiC MOSFETs, it is also possible to develop and use medium-voltage (MV) power semiconductor devices greater than 6.5 kV without experiencing very high losses [5]. The SiC MOSFET design and development can be divided into two broad categories: low-voltage (LV)-blocking (<3.3-kV) and MV-blocking (>3.3-kV) SiC MOSFETs [6]. Although MV SiC MOSFETs can enable niche applications, there is widespread use of LV-blocking power devices in various applications such as renewable energy, drives for electrical machines, power converters for electric vehicles, and so on, whereas SiC MOSFETs can offer a multitude of advantages over Si IGBTs [7], [8].