Recent Advances in Gate Driver Integrated Circuits for Wide-Bandgap FETs: Manufacturers introduce gate drivers for squeezing the best performance out of WBG devices

With the many well-known attributes of wide-bandgap (WBG) power devices, especially silicon carbide (SiC) and gallium nitride (GaN) FETs, the WBG adoption has been growing constantly for the past few years. Lately, with significant improvements in reliability and commercial availability, several manufacturers have taken SiC- and GaN-based products to production. Market data from research firms, such as Yole and IHS, show that this trend will continue to rise during the next five to 10 years.