Design and simulation of 3D-silicon sensors for future vertex detectors

Several sensor technologies are currently under development to define a new generation of time and space (4D) tracking detectors [1] , [2] able to operate at high luminosity conditions [3] . One of those technologies is the 3D silicon sensor. This kind of sensor is characterized by a particular configuration of its electrodes which are built vertically to the wafer surface by digging columnar or trenched structure hundreds of micrometers deep through the silicon wafer using specific etching techniques [4] . This approach decouples the interelectrode distance from the wafer thickness, achieving lower depletion voltage, higher radiation hardness and also faster charge collection times, typically smaller than 500 ps.