Abstract:
The monolithic on-chip integration and design of a high current density InP-based Triple Barrier Resonant Tunneling Diode within a bow-tie antenna structure for detection...Show MoreMetadata
Abstract:
The monolithic on-chip integration and design of a high current density InP-based Triple Barrier Resonant Tunneling Diode within a bow-tie antenna structure for detection application is presented. The asymmetrical current-voltage characteristics of the Triple Barrier Resonant Tunneling Diode and its small capacitance provide a powerful candidate for THz signal detection. The integration into a planar broadband antenna structure such as a bow-tie design enables realization of a broadband detector from single GHz up to THz frequencies. In this work, experimental data are demonstrated in the frequency range of 75 to 110 GHz and from 220 to 330 GHz.
Date of Conference: 01-03 July 2019
Date Added to IEEE Xplore: 05 September 2019
ISBN Information: