Broadband Low Noise Distributed-Gain Amplifier Designed in 130 nm Process

In the article results of low noise distributed-gain amplifier designing in 130 nm SiGe process are presented. Low noise amplifier is based on five amplification sections connected by means of micro strip transmission lines. Each amplification section consists of cascode amplification stage based on heterojunction bipolar transistors and each section is resistor loaded. The following results are obtained: 12 dB gain with low increasing on frequencies more than 10 GHz, noise figure is 4.9 dB, Input port Standing Wave Ratio(SWR) is below 2, the output SWR is below 1.6, consumption current 48 mA, die size is 2020 x 200 um
²
.