A New Effective-Conducting-Path-Driven Subthreshold Behavior Model for Junctionless Dual-Material Omega-Gate Nano-MOSFETs

In this paper, a generalized analytical subthreshold behavior model for junctionless omega-gate (JLΩG) MOSFETs combining dual-material gate (DMG) is built. Through the effective conducting path effects (ECPEs), we propose a new concept of off-center ratio (δ) dominating the effective scaling length to derive our model based on the effective conducting central potential (Φ_eff,C), obtained by quasi-3D potential method. It provides a more accurate expression of scaling equation for JLΩGFETs and leads to an improved subthreshold behavior prediction. Accounting for these renewed potential and current models, we utilize dual materials to achieve better immunity to short channel effects. The proposed modeling can be extensively applied to other multiple-gate (MG) nano-transistors as well.