High-Speed and High-Power MUTC Photodiode Working at 1064 nm

We demonstrate low-dark-current, high-speed and high-power back-illuminated flip-chip-bonded modified uni-traveling carrier photodiodes operating at 1064 nm. The photodiodes with 15 μm and 18 μm diameters achieve 18.6 dBm RF output power at 55 GHz and 19.4 dBm RF output power at 41 GHz, respectively. The bandwidth is analyzed with parameters obtained from S-parameter fitting. There is good agreement between measured and calculated bandwidths.