Selective-area MOVPE growth of multi-$\lambda$ InGaAlAs-based MQWs on patterned InP-on-insulator substrate

We demonstrate the selective-area metal-organic vapor phase epitaxy (MOVPE) growth of InGaAlAs MQWs on an InP membrane directly bonded to a SiO
2
/Si substrate (InP-on-insulator substrate). We obtained MQWs with multiple wavelengths ranging from 1204 to 1276 nm in a single growth by changing the design of the selective-area growth mask formed on the InP membrane. The PL wavelengths for the MQWs grown with different masks range from 1204 to 1276 nm with no obvious degradation, which shows the potential for fabricating multi-lambda laser arrays and EADFB lasers. We also demonstrate the fabrication of buried-heterostructures by the regrowth of InP. Both the wafer-level and longitudinal-direction uniformity of the active region are very high.