Defects Investigation in Low-Temperature and Low-Pressure Sintered Silver Thermal Joints for Non-Metalized Semiconductors

Research goal was to detect defects and imperfections of sintered silver layer at thermal joints. Such defects may influence the contact area which lower mechanical strength of the joint with the usual consequence of reducing the heat flow between joined elements. Research obtained different types of layer quality analysis: X-ray analysis was done to obtain layer imaging, threshold (image binarization)was used for analysis of achieved images, scanning electron microscope imaging in energy dispersive X-rasy scattering was performed to determine sintered layer surface composition.