Industrial-Grade Fabrication of Nanowire Sensor Device Exploiting Sacrificial Shadow Patterning Method

A major obstacle to the industrial application of nanowires is difficulty in fabricating nanowire devices with uniform performance. In this study, we newly developed a wafer-level uniformly size-controlled nanowire fabrication method for reliable demonstration of a high-yield, uniform nano-sensor device. We show that the developed fabrication method can be used to simply fabricate remarkably small nanowires (sub-50 nm) with a wide material selection. Importantly, the fabricated nanowires have ultra-high size uniformity on the 4-inch wafer. Finally, we demonstrate nanowire-based hydrogen (H
₂
) sensors using the developed method. Owing to the geometric uniformity of the fabricated nanowires, the sensor devices achieved highly uniform sensitivity of 10.9±0.5 % at a 2% H
₂
concentration.