Performance of MOX Gas Sensors Obtained by Mixing P-Type and N-Type Metal Oxides for Relaible Indoor Air Quality Monitoring

In this work, we study the effect of n-p heterojunctions in metal oxides semiconductors (MOS) gas sensors, and particularly on their gas sensitivity and relative humidity dependence for indoor air quality applications. This effect depends on the relative proportion of MOS in the mixture between SnO
2
, CuO and ZnO. This study was achieved in order to build a MOS gas sensors that overcomes the effects of humidity variations and to improve the overall sensitivity of MOS gas sensors.