MARLOWE Simulation of High Energy Ions into Single Crystalline Silicon Substrates

Implant simulation using the MARLOWE code is introduced to take the channeling effect into account. Using this code, the behavior of implanted ions in a crystalline Si substrate can be better understood. In particular, the lateral distribution cannot be measured using current methodology and can only be predicted based on simulation data. Since the variation of the lateral distribution could affect the width of the isolation between photodiodes, it is important to compare ion implantation conditions such as incident angles, ion angle deviations, and crystal cut accuracy on the order of 0.1° or less. The substrate temperature during implant is another factor that influences variation.