Simulation Study of Al Channeling in 4H-SiC

The modeling of channeled Al implantation into SiC in a Monte Carlo binary collision (BC) framework is revisited, using experimental data from 60 keV to 1.5 MeV in a dose range from 1.8 × 10
¹²
to 4.1 × 10
¹⁴
Al/cm
²
. From simulated channeling maps, [0001], [112̅3], and [112̅0] are determined as the three major channeling directions in 4H-SiC. 1D and 2D implant distributions are investigated. It is found that implantation in channeling directions provides more abrupt profiles with considerably less penetration beneath a mask edge than random implants. Channeling along [112̅0] has a clear advantage over [0001] and [112̅3], both in terms of less lateral penetration and lower sensitivity to implant damage and beam divergence. The validity of the BC simulations is corroborated by molecular dynamics (MD) simulations for selected conditions.