Numerical Simulation and Analysis of Growth Rate of GaN Thin Films

By simulating the process of GaN thin film formation, several important parameters affecting the growth rate of the GaN thin film are analyzed numerically, and the relationship between those parameters and the growth rate of GaN is discussed. It is found that the average growth rate of the film increases first and then decreases with the increase of the substrate temperature. It is also found that the growth rate reaches its maximum at a substrate temperature around 800
^o
C-900
^o
C, and its maximum value is also related to the flow of TMGa. The results show that the growth rate of the film increases with the increase of TMGa flow rate, and the growth rate is directly proportional to the hydrogen and nitrogen content in the carrier gases under the conditions of high temperatures, whereas it is the opposite under the conditions of lower temperature. In order to improve the uniformity of the film, the growth temperature should be lowered and the nitrogen content in the carrier gas should be increased. The lower rotation speed of the susceptor has little effect on the growth rate and uniformity. But with the increased rotation speed of the susceptor, the growth rate is increased, and the uniformity of the film thickness is improved. The results obtained can be used as a reference for parameter configuration in actual film growth.