GaN on Si RF Devices and MMICs-Pivotal Driving Force of 5G Communication Micro/Macro Cells

5G communication and its related wireless technology will bring tremendous challenges for various base station and mobile handset manufacturers due to lower latency, high data rates and capacity requirements. In addition, the integration complexity of millimeter wave integrated circuit will be a pivotal parameter to enlarge and fasten the implementation of 5G MIMO at millimeter-wave bands. GaN on Si technology provides a highly potential for this goal because its high integration ability with low-cost and large-diameter Si substrates. The volume of GaN on Si technology also provides huge capability to high volume production challenges for 5G sub-6 GHz and mmW bands. The GaN on Si device and mmic development will be introduced in this study.