L-Band 1000W Single-Chip Internally Matched GaN Amplifier

In this paper, A L-Band single-chip internallymatched AlGaN/GaN amplifier has been developed. The gate-periphery of the GaN HEMT is 55mm. The input and output matching circuit with the GaN chip are integrated in a 17.4mm×24mm ceramic package. The internally matched amplifier has demonstrated the pulse output power of over 1000W, power density of 18W/mm and the power gain of 18dB across the 1.25GHz to 1.35GHz with the voltage of 80V, and the max power added efficiency is 71.4% under the pulse condition at a duty of 1% with a pulse width of 5μs. This is the highest combination of output power, power gain and PAE from a single-chip AlGaN/GaN HEMT at L band.