Aspects of Highly-channeled MeV Implants of Dopants in Si(100)

This tutorial reviews key issues for use of highly-channeled profiles with MeV energy dopants in Si. Practical issues for systems and process, including beam-wafer alignment, beam divergence and wafer temperature, are discussed as well as the use of Monte-Carlo modeling to guide process development. Recent photo- and cathodo-luminescence results on the effects of elevated wafer implant temperatures on residual defects after annealing in channeled MeV dopant implants are outlined.