Prospects for Development of Fast Recovery Power GaAs SBD on the basis of LPE-Technology

The article is devoted to advanced high voltage, high temperature and hyperfast GaAs SBD, GaAs HJSBD structures with extreme high electrical and physical characteristics (V
_RRM
= 1200 V; I
_F
= 10 ÷ 50 A; V
_F
≤ 0.5 V; τ
_rr
=5÷10 ns; maximum junction temperature T
_j
= 300°C; T
_case
= 250°C; f
_sw
= 5÷8 MHz). We have compared the suggested diodes with high current SiC, GaAs and Si diodes, produced by microelectronics leaders. A brief description of LPE-process is given. We have shown that a specific feature of the suggested epitaxial structures is the existence of built-in quantum point magnetic centers with density 10
¹³
÷10
¹⁴
sm
^-3
in n
^-
-type epitaxial layer leading to sharp decrease of electron capture cross-section during diode reverse resistance recovery. The experiments have proved that this physical phenomenon is associated with drift electron capture cross-section change, that is equivalent to abrupt “above-Gunn” increase of electrons' mobility. The experimental investigations have demonstrated, that LPE GaAs SBDs of classical variant of construction design have τ
_rr
≈ 100 ps at operating voltages of 220 V. The possibility to decrease a direct fall of voltage at GaAs SBD (HJSBD) with simultaneous decrease of its barrier capacitance is under discussion.