Nanowire and Superlattice Mid-Infrared Emitters on Silicon

We present 6.1 Å mid-infrared superlattice light emitters on (100) Si that outperform those on GaSb, and mid-infrared (wurzite) nanowires grown on (111) Si with favorable emitter characteristics, including Auger coefficients an order of magnitude smaller than comparable planar (zinc blende) materials.