Flexible IGZO thin-film transistors with liquid EGaln gate contacts

Flexible thin-film electronics leverage technological innovations in fields such as sensors, wearable Computing and healthcare. As these Systems are required to conform to non-planar surfaces, novel approaches are developed to provide stable performance under mechanical stress, and prevent crack formation. Liquid eutectic-Galn promises the realisation of self- healing, reconfigurable and bendable circuits. Here, a liquid EGaln-gate thin-film transistor is fabricated and characterised. The device yielded a carrier mobility of 7.9 cm 2 V –1 s –1 that increased by 0.36 cm 2 V 1 s –1 when bent to a 4 mm radius. These results promote the integration of highly deformable liquid materials into thin-film devices.