Novel photodetectors and image sensors based on silicon-on-insulator substrate

In this paper, we review our recent work on several novel photodetectors and image sensors based on silicon-on-insulator substrate (SOI). Interface coupled photodetector (ICPD) is demonstrated to largely improve the responsivity of the SOI photodetector by interface coupling effect. In order to tune the response spectrum, a MoS
2
/SOI heterogenous ICPD is developed, where the MoS
2
gate is used as sensitizer to tune the response spectrum of the device from UV-band to visible/near-infrared band. Besides, a novel one-transistor active pixel sensor (1T-APS) is presented, which uses deep depletion effect in SOI substrate to collect photoelectrons and the MOSFET on top Si layer to sense the accumulated photoelectron. The 1T-APS in-situ integrates photosensing, charge integration, buffer amplification and random access in only one transistor. This is very attractive for image sensing application thanks to it’s much more compact pixel structure compared to conventional CMOS APS.