Abstract:
A high efficiency isolated resonant gate driver (IRGD) for SiC MOSFET with a level shift circuit is proposed in this paper. The proposed IRGD is capable of providing isol...Show MoreMetadata
Abstract:
A high efficiency isolated resonant gate driver (IRGD) for SiC MOSFET with a level shift circuit is proposed in this paper. The proposed IRGD is capable of providing isolated drive signals, low gate drive loss and asymmetrical on/off gate-driver voltage, which could improve the efficiency and reliability. Compared to the previous IRGD suitable for SiC MOSFET, it realizes similar characteristics but implements less components enabling to reduce the drive cost. The operation principle, design considerations, performance comparison, simulation and experiment verification are presented, and the results verified the effectiveness of the proposed solution scheme.
Date of Conference: 19-21 June 2019
Date Added to IEEE Xplore: 08 August 2019
ISBN Information:
Print on Demand(PoD) ISSN: 2377-5483
Contents 