Advanced MOS Device Technology for Low Power Logic LSI

MOSFETs with alternative channels such as Ge and III-Vs on the Si platform have been strongly expected over recent 15 years for high performance and low power logic devices, where the reduction in V
_dd
is the most critical requirement. Also, steep slope devices such as tunneling-FETs (TFETs) have stirred a strong interest from the viewpoint of ultralow power applications. In this paper, we briefly address the current status of MOSFETs and TFETs using alternative materials such as Ge, III-V and oxide semiconductors for future low power scaled devices and review the recent progress in device and process technologies on a basis of our research activities.