Analytical Model for Threshold-Voltage Shift in Submicron Staggered Organic Thin-Film Transistors

This paper presents a compact model for the threshold-voltage shift, consisting of V
_T,roll-off
and Drain-Induced-Barrier-Lowering (DIBL), in short-channel staggered organic thin-film transistors (OTFTs). An analytical surface potential solution is derived for a staggered geometry containing two-dimensional effects which is used to extract the V
_T,roll-off
and DIBL out of it. Thus, the closed-form and physics-based equations extend an existing compact current model by incorporating them into expressions for V
_T
. Verification of the modeling approach is done by comparison with TCAD Sentaurus simulations as well as measurements on organic TFTs with a channel length down to 400 nm.