Silicon carbide power electronics for high temperature applications

This paper describes the characterization and modeling of the performance and reliability of SiC devices. A fundamental study of material defects and process techniques in SiC is needed for significant material purification. It will also result in a comprehensive physics-based defect model, a high-voltage diode behavioral circuit model, and improved edge-termination and passivation techniques. This paper shows initial results of experimental determination and modeling of the role of material defects and surface passivation on 100-V diode breakdown and electrical performance. The devices are subjected to dynamic stresses typical of switching applications to determine the dynamic SOA and avalanche rating of the devices.