Capacitive and Inductive Properties of Composite Films with Silicon and Metal Nanocrystals

The results on investigations of the impedance of the oxide based nanocomposite films containing silicon and metal nanocrystals are presented. The voltage and frequency dependences of the capacitive and inductive parts of the impedance of structures with SiO
_x
(Si, Fe) and SiO
_x
N
_y
(Si, Al) films are analyzed in detail. It was established the the power dependence on the frequency according to the Mott's law for the hopping transport on alternating current. As it was revealed in the structures with nanocomposite SiO
_x
N
_y
(Si, Al) film the capacitive component dominates in the reactive part of the impedance. On the other hand in the structure with nanocomposite SiO
_x
(Si, Fe) film the reactive component of the impedance has an inductive character up to the frequency of 1 MHz. The obtained results point out on the possibility to use the SiO
_x
(Si, Fe) film as the flat film inductance in the HF micro- and nanoelectronics circuits.