Influence of Channel Thickness on Analog and RF Performance Enhancement of an Underlap DG AlGaN/GaN based MOS-HEMT Device

This paper elucidates a comprehensive, illustrative and qualitative study on the Analog and RF performance of an Underlapped Double-Gate (U-DG) AlGaN/GaN heterojunction-based MOS-HEMT device with Hafnium-based high-k dielectric gate material. This paper presents the effect of GaN channel thickness variation on the drain current (I
_d
), the transconductance (g
_m
), output resistance (RO), the intrinsic gain (g
_m
R
_o
), transconductance generation factor (g
_m
/I
_d
) and the RF FOMstotal intrinsic gate capacitance (C
_gg
) and cut-off frequency (fτ). These hetero-structured devices show superior performance as power transistors due to its enhanced efficiency, cost-effectiveness, reliability and controllability over silicon based conventional DG-MOS and HEMT transistors.