Effect of TiOx Film Thickness on Resistive Switching Behavior of TiN/TiOx/HfO2/Pt RRAM Device

In this work, TiN/TiO
_x
/HfO
₂
/Pt resistive random access memory (RRAM) devices with different TiO
_x
film thickness were fabricated. The distributions of cycle-to-cycle and device-to-device showed that the RRAM devices with thick TiO
_x
film performed high ratio and small switching voltage. Besides, the RRAM device with thick TiO
_x
film under pulse measurement shows as fast as 20ns pulse width and can be cycled for 1e6 cy.